Corporate Events

ROHM Co., Ltd. has developed the RS4P063BPHZG, a 100V MOSFET optimized for automotive safety functions and protection circuits. The new product achieves a Wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately five times the SOA tolerance of standard equivalent-sized products under VDS=100V and PW=100 microseconds. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seat belt pretensioner drive circuits. Adopting the standard 5060-size package also simplifies replacement evaluation with existing layouts, helping reduce the workload and costs associated with design changes. Recent advances in vehicle electrification are increasing demand for automotive systems that support higher voltages and currents. In particular, safety functions and protection circuits may experience momentary high-power loads during abnormal or emergency conditions, requiring the MOSFETs that drive them to provide high SOA capability. ROHM has established a strong track record of providing Wide-SOA products for AI servers and industrial power supplies, including products that have been selected as recommended components by a global cloud platform provider. The RS4P063BPHZG brings the same technologies and expertise to the automotive field. ROHM is developing automotive Wide-SOA MOSFETs in the HPLF8080 (8.0 x 8.0 mm) and TOLG (TO-Leaded with Gullwing, 9.9 x 11.7 mm) packages as well. Going forward, ROHM will continue expanding its portfolio for automotive safety functions and protection circuits. Application examples – Airbag inflator ignition circuits – Seat belt pretensioner drive circuits – Pyro-fuse drive circuits for battery cutoff – Other automotive safety functions and protection circuits exposed to short-duration high-current and high-voltage stress.

ROHM Semiconductor has developed the RS4P063BPHZG, a 100V MOSFET optimized for automotive safety functions and protection circuits. The new product achieves industry-leading Wide-SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (5060-size) package widely used in automotive applications. By incorporating a design that effectively suppresses secondary breakdown, it delivers approximately 5 times the SOA tolerance of standard equivalent-sized products under VDS=100V and PW=100µs. This contributes to greater reliability in automotive applications subject to momentary high-power loads, including airbag inflator ignition circuits and seatbelt pretensioner drive circuits. Adopting the standard 5060-size package also simplifies replacement evaluation with existing layouts, helping reduce the workload and costs associated with design changes. Recent advances in vehicle electrification are increasing the demand for automotive systems that support higher voltages and currents. In particular, safety functions and protection circuits may experience momentary high-power loads during abnormal or emergency conditions, requiring the MOSFETs that drive them to provide high SOA capability. ROHM has established a strong track record of providing Wide-SOA products for AI servers and industrial power supplies, including products that have been selected as recommended components by a global cloud platform provider. The RS4P063BPHZG brings the same technologies and expertise to the automotive field. Mass production began in June 2026. Design models and development tools are also offered on ROHM’s website to support rapid circuit evaluation. ROHM is developing automotive Wide-SOA MOSFETs in the HPLF8080 (8.0 × 8.0mm) and TOLG (TO-Leaded with Gullwing, 9.9 × 11.7mm) packages as well. Going forward, ROHM will continue expanding its portfolio for automotive safety functions and protection circuits. Application Examples: Airbag inflator ignition circuits, Seatbelt pretensioner drive circuits, Pyro-fuse drive circuits for battery cutoff, Other automotive safety functions and protection circuits exposed to short-duration high-current and high-voltage stress. EcoMOS is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.

ROHM Semiconductor has developed the SDR01 Series of high anti-surge chip resistors, delivering a class-leading rated power of 0.33W in the 0402 (1005 Metric) size. Designed for electronic equipment where mounting densities continue to increase, the series is well suited for automotive, industrial, consumer electronics, and AI server applications. The new products help save board space and reduce component count by enabling replacement of larger-size resistors and consolidation of resistors while maintaining the reliability required of anti-surge chip resistors. As electronic equipment becomes more highly functional and requires higher power, demand is rising across automotive, industrial, and consumer markets for electronic components that combine compact size with high power handling. These trends are also increasing the need for smaller high-reliability chip resistors, including anti-surge products. In power supply circuits and around interfaces, resistance to surges and electrostatic discharge (ESD), as well as high-power capability, is required. To address these needs, ROHM optimized the resistive element and electrode designs of the SDR01 Series. This enables high rated power to be guaranteed in the 0402 size while securing the reliability expected of high anti-surge chip resistors. The new products guarantee 0.33W up to the rated terminal temperature of Tk=125°C. This makes them easier to use in demanding thermal environments, such as high-density mounting and areas around heat-generating components, helping reduce the thermal design burden. In addition, these products achieve a TCR of ±100ppm/°C for 10O = R = 2.2MO. By suppressing resistance-value fluctuations caused by temperature changes, the products support stable circuit operation and contribute to smaller, more reliable power supply circuits and peripheral interface circuits. Mass production of the new products has already begun. ROHM will continue to expand its lineup of high-reliability chip resistors, contributing to greater miniaturization, higher power handling, and higher reliability in electronic equipment. Application examples include power supply and control circuits in automotive, industrial, and consumer electronics requiring compact size, high power handling, and high reliability.

ROHM Semiconductor had developed 4th Generation 650V IGBTs ideal for automotive electric compressors and HV heaters, as well as inverters for industrial equipment. As automotive-grade 650V-class products, new IGBTs achieve class-leading low conduction loss with VCE(sat)= 1.55V, while providing high short-circuit tolerance and complying with the AEC-Q101 automotive reliability standard. As electric vehicles shift to higher voltages, SiC is increasingly adopted in high-power applications such as traction inverters. At the same time, 650V IGBTs are widely used as switching devices in auxiliary systems with lower power capacity, including automotive electric compressors and HV heaters. Silicon IGBTs are also widely used in industrial equipment, particularly motors and compressors, and demand is expected to continue expanding. These applications require greater energy savings and smaller equipment designs, creating strong demand for power devices that offer higher reliability, smaller size, and higher efficiency. In particular, inverter and heater circuits require short-circuit tolerance sufficient to endure the time needed to detect and interrupt overcurrent during a short circuit. In response to these market requirements, ROHM redesigned the device structure, including the process and edge termination structure, to develop 4th Generation IGBTs that combine low-loss characteristics with high short-circuit tolerance while addressing higher-voltage requirements. By revising the device structure, the products increase current density while reducing conduction and switching losses. In addition, despite the trade-off between lower loss and short-circuit tolerance, the products ensure a long short-circuit withstand time of 7 µs at Tj = 25°C. This contributes to higher efficiency and improved reliability in applications. The lineup includes 12 products in the TO-247N package, the RGAxxTS65HR /RGAxxTS65EHR series, and 10 bare wafer products, the SG83xxWN series. ROHM is also developing 12 products in the TO-247-4L package, the RGAxxTR65HR/RGAxxTR65EHR series. Design models and materials needed for circuit design are also available for download from ROHM’s official website. The TO-247N package products and selected bare wafer products have been available. ROHM plans to further expand the lineup in the same packages and develop compact, surface-mount IGBT products that adopt the TO-263L package and top-side cooling (TSC) packages. ROHM will continue to expand its lineup of high-performance IGBT products, contributing to higher-efficiency drive and miniaturization in automotive and industrial equipment applications. Application Examples: Automotive electric compressors, Automotive HV heaters (PTC heaters, coolant heaters), Industrial equipment inverters. ROHM’s official website provides SPICE models that faithfully reproduce the electrical characteristics of the products in simulations, PLECS models for electrical circuit simulation, and other materials needed for circuit design. EcoIGBT is ROHM’s brand of IGBTs consisting of both devices and modules designed to meet the needs of high-voltage applications in the power device field. ROHM independently develops technologies essential for the evolution of power devices, from wafer fabrication and production processes to packaging and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process.

ROHM Co., Ltd. provided consolidated earnings guidance for the Year Ending March 31, 2027. For the year, the company expected net sales of JPY 510,000 million; Operating profit of JPY 30,000 million; Profit attributable to owners of parent of JPY 29,000 million; and Net income per share of JPY 75.12.

ROHM Co., Ltd. provided annual dividend guidance of JPY 50.00 per share for the fiscal year ending March 31, 2027 as compared to total annual dividend guidance of JPY 50.00 per share a year ago.

ROHM Co., Ltd. reported earnings results for the first quarter ended June 30, 2026. For the first quarter, the company reported sales was JPY 135,739 million compared to JPY 116,205 million a year ago. Net income was JPY 9,006 million compared to JPY 2,966 million a year ago. Basic earnings per share from continuing operations was JPY 23.33 compared to JPY 7.69 a year ago. Diluted earnings per share from continuing operations was JPY 19.9 compared to JPY 6.55 a year ago.

ROHM Semiconductor has developed a 2nd Generation terahertz (THz) wave oscillation device using semiconductor elements known as Resonant Tunneling Diodes (RTDs). ROHM is making the device available via the RTD-EVK-G2 Terahertz Wave Device Evaluation Kit, which includes a sample device, cable, and evaluation board. The kit enables companies and research institutions to evaluate THz wave oscillation and detection in a compact development environment. Occupying the frequency region between radio waves and light, terahertz waves combine the penetrating properties of radio waves with the straight-line propagation of light. Because they exhibit unique absorption characteristics for polymers, moisture, and other substances, they are expected to be used in non-destructive testing without ionizing radiation, medical and healthcare applications, and high-resolution radar sensing. Since the late 2000s, ROHM has engaged in joint research with the Institute of Science Tokyo, Osaka University, and many other universities and research institutions to develop THz wave oscillation and detection devices using RTDs. In 2024, ROHM began offering samples of 1st Generation products, achieving substantial downsizing and cost reduction compared with conventional methods. ROHM has now developed a 2nd Generation terahertz wave oscillation device. The device maintains the same compact 0.5 × 0.5mm chip size as the 1st Generation product while adopting an internal structure that enables higher output power. As a result, output power has been increased to approximately 4 times that of the 1st Generation product, reaching a maximum of 40µW. The higher output power improves the detectability of THz waves after transmission through or reflection from target objects – making the device well suited for applications such as sensing and imaging that require high signal quality. The device is mounted in the same 4.0 × 4.3mm PLCC package, maintaining the industry’s smallest footprint. This enables evaluation environments to be built even in space-constrained settings. In addition, compared with other THz generation methods, the RTD approach generates less heat and consumes less power, reducing application development load at both companies and research institutions. Sales of the RTD-EVK-G2 evaluation kit, which includes samples of the 2nd Generation wave oscillation device, are planned to begin in August 2026. By enabling evaluation at a lower cost than other methods, the kit supports the development of a wide range of applications, including non-destructive testing; imaging and sensing in the medical and healthcare sectors; material identification; and moisture detection. ROHM will also continue sales of 1st Generation devices for applications that prioritize low power consumption. ROHM is committed to supporting terahertz wave research and application development and offers a variety of support materials. Combining the RTD-EVK-G2 Terahertz Wave Device Evaluation Kit with measurement tools such as Analog Discovery 3™ from Digilent (along with a computer and software) allows users to easily evaluate THz wave oscillation and detection. Both the device and evaluation board are compact, making it possible to build a research and development environment even in limited spaces.

ROHM Co., Ltd., ¥ 25.0, Cash Dividend, Sep-29-2026

ROHM Co., Ltd. has developed a new evaluation board, the BD83070GWL-EVK-002, with a view to fully demonstrating the features of the BD83070GWL DC-DC converter IC, which combines high efficiency with ultra-low current consumption. This new board is now available for purchase online. In addition, reference design resources, including circuit layout data and the bill of materials (BOM), are publicly available, enabling a smooth transition from evaluation to mass-production design. The BD83070GWL is a buck-boost DC-DC converter IC developed with the goal of becoming a definitive low-power eco-device for electronic devices powered by small batteries and other limited power sources. It achieves high efficiency of up to 97% and an ultra-low quiescent current of 2.8 microamperes. The newly developed evaluation board was designed to achieve the smallest possible footprint for a buck-boost DC-DC converter, a key requirement for small battery-powered devices. By integrating the BD83070GWL with a coil, capacitors, and a total of only five components, it achieves an ultra-compact mounting area of 12.87 mm2 (3.3 x 3.9 mm). As a result, it offers a significant advantage in terms of mounting area compared to conventional buck-boost DC-DC IC configurations, including those with built-in coils. Application examples include wearable devices: smartwatches, smart rings, biometric sensing devices, etc.; mobile devices: AR/VR devices, smartphones, etc.; IoT devices: AI sensor nodes, BLE devices, smart locks, small drones, etc.; small battery-powered devices: E-cigarettes, wireless earbuds, digital keys, electric toothbrushes, etc.

ROHM Co., Ltd., Board Meeting, Jun 24, 2026. Agenda: To consider and approve Disposal of Treasury Share as Performance Share Restricted Stock Unit Compensation Plan.

ROHM Semiconductor announced it has developed the “AG16xFNxx Series,” a lineup of 80V power MOSFETs designed for 48V power supply systems, which are becoming increasingly common in automotive applications. In the automotive sector, power demand is increasing, particularly in high-end vehicle models. 48V power supply systems are gaining attention as a highly efficient alternative to conventional 12V power supply systems. With widespread adoption expected around 2030, there is a growing need for 80V power MOSFETs that can achieve even lower power losses than standard 100V devices. ROHM’s new products are expected to enable downsizing compared to standard automotive MOSFET packages such as the TO-252 (6.6 × 10.0mm) by adopting the HPLF5060 (4.9 × 6.0mm) and DFN3333 (3.3 × 3.3mm) packages. The HPLF5060 features Gull-Wing Leads, while the DFN3333 features Wettable Flank Technology, contributing to improved reliability on PCBs (Printed Circuit Boards). Furthermore, by adopting Copper Clip Junction Technology to enhance heat dissipation, these devices are capable of handling high currents. All models comply with the automotive reliability standard AEC-Q101, ensuring high reliability. Mass production of new products began in April 2026 for the AG160FNS4FRA (HPLF5060) and the AG166FNH7FRA (DFN3333). Online sales have also started, and the products are also available for online purchase through online distributors such as DigiKey and Farnell. The product lineup of these packages will be further expanded in the near future. In addition, development of TOLG (TO-Leaded with Gullwing, 9.9 × 11.7mm) packaged products has begun, with continued expansion of the lineup of high-power, high-reliability 80V MOSFETs.

ROHM Co., Ltd. has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs. By adopting a top-side heat dissipation structure that places the heat dissipation surface on the top of the package, the new product enables automated mounting while achieving heat dissipation performance comparable to that of conventional through-hole packages (TO-247-4L). This contributes to greater efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors used in xEVs (electric vehicles). In xEVs, the adoption of SiC devices is expanding beyond main inverters to include power conversion circuits such as OBCs and electric compressors to improve charging speed and extend cruising range. Through-hole type devices involve manual mounting processes, and their form factor makes it difficult to achieve a lower package profile. Surface-mount SiC devices compatible with automated mounting have begun gaining adoption. To address these issues, the new TSC3PAK delivers heat dissipation performance comparable to through-hole technology such as TO-247 in a surface-mount package. The new package incorporates ROHM’s proprietary groove structure to secure a long creepage distance of 6.66 mm, allowing it to accommodate an AC peak voltage of 1200 V in a Pollution Degree 2 environment while maintaining compatibility with products widely adopted in the market. Products using the new package incorporate ROHM’s 4th Generation SiC MOSFETs, achieving low ON resistance and high-speed switching characteristics. As a result, switching losses during power conversion are significantly reduced, contributing to greater application efficiency and lower power consumption. Mass production started in June 2026. Application Examples – Automotive Systems: Onboard chargers (OBCs), electric compressors – Industrial Equipment: PV inverters, server power supplies.

ROHM Co., Ltd. has announced that its 750V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (High-Voltage Direct Current) architectures. In this environment, ROHM’s device was selected as a SiC power device that supports next-generation power supply systems. As generative AI drives higher GPU performance and rising data center power consumption, the industry is moving toward HVDC architectures to reduce power transmission losses. In these high-power, high-voltage environments, BBUs and CUs (Capacitor Units) play an increasingly important role in protecting rack-level systems during power outages or momentary interruptions. The adopted product is the “SCT4013DLL,” a 750V SiC MOSFET that is installed in the power supply section of a +400V /-400V power architecture for AI servers. Leveraging the characteristics of SiC, this product offers high-temperature tolerance with a maximum junction temperature (Tj) of 175C, enabling stable operation even in BBUs where heat generation increases as voltages and power density rise. In next-generation 800VDC power architectures, the supply voltage delivered to the battery pack inside the BBU is approximately 560V. For this reason, ROHM’s 750V rated SiC MOSFETs can also be used in these systems. Next-generation AI server power supplies require backup systems that can control high voltages and large currents instantly with minimal power loss. SiC power devices are expected to serve as key devices in these systems.

ROHM Semiconductor announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM’s device was selected as a SiC power device that supports next-generation power supply systems. As GPUs continue to deliver higher performance and generative AI adoption expands, data center power consumption is increasing rapidly. To address this issue, the industry is moving toward HVDC architectures to reduce power transmission losses. In these high-power, high-voltage environments, BBUs and CUs (Capacitor Units), which compensate power at the server-rack level, are playing an increasingly important role in protecting systems and massive volumes of data in the event of abnormalities such as power outages or momentary interruptions. The adopted product is the SCT4013DLL, a 750 V SiC MOSFET that is installed in the power supply section of a ±400 V power architecture for AI servers. Leveraging the characteristics of SiC, this product offers high-temperature tolerance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases as voltages and power density rise. In next-generation 800 VDC power architectures, the supply voltage delivered to the battery pack inside the BBU is approximately 560 V. For this reason, ROHM’s 750 V rated SiC MOSFETs can also be used in these systems. HVDC power supplies for next-generation AI servers require backup systems capable of controlling high voltages and large currents instantly, with minimal power loss in the event of an abnormality. To meet these demanding requirements, SiC power devices that combine high voltage capability, low loss, and high-temperature tolerance are expected to serve as key devices at the core of power control. Looking ahead to continued growth in the AI server and data center markets, ROHM will further strengthen the development and supply of power devices using SiC, GaN, and silicon. ROHM will also contribute to higher power efficiency and the realization of a sustainable society by proposing solutions that combine these power devices with analog ICs and other technologies. EcoSiC Brand: EcoSiC is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, the company have established an integrated production system throughout the manufacturing process, solidifying position as a leading SiC supplier.

ROHM Co., Ltd. Presents at PCIM Europe 2026, Jun-09-2026 . Venue: Nuremberg Messe, Nuremberg, Germany.

ROHM Co., Ltd. has developed a configurable power supply solution that combines the PMIC BD968xx-C Series with the DrMOS BD96340MFF-C, targeting automotive SoCs (Systems on a Chip) used in applications such as ADAS (Advanced Driver Assistance Systems), DMS (Driver Monitoring Systems), and sensing cameras. In recent years, increasing performance demands for automotive SoCs, due to the evolution of ADAS, enhanced in-vehicle camera functionality, and ECU (Electronic Control Unit) integration, have accelerated the shift toward domain architectures centered around domain controllers. As a result, power supply designs now require the ability to support low-voltage, high-current operation, along with advanced power sequencing control and high reliability. Conventional power supply architectures often require significant customization to accommodate differences among SoC manufacturers and generations, frequently leading to redesigns during model rollouts. This increased both development time and verification workload. To address these challenges, ROHM has developed this solution based on a "Configurable" design concept enabling flexible adaptation to a wide range of SoC power requirements. This solution enables scalable power supply designs that support a wide range of SoCs, from low-end to high-end, by flexibly configuring combinations of main configurable PMICs, sub PMICs, and DrMOS devices according to application and performance requirements. This scalable approach reduces development effort during platform expansion while enhancing power efficiency and design reuse. All PMICs are designed for a 2.7 V to 5.5 V input voltage range. BD96803Qxx-C and BD96811Fxx-C are optimized for standalone operation with low-end SoCs. BD96805Qxx-C and BD96806Qxx-C, when combined with the DrMOS BD96340MFF-C, can support low-voltage, high-current demands required by high-performance SoCs. The PMICs are housed in wettable flank QFN packages while the DrMOS is in a flip-chip QFN package. All devices are AEC-Q100 qualified, ensuring high reliability for in-vehicle applications.

ROHM Co., Ltd., Annual General Meeting, Jun 24, 2026.

ROHM Co., Ltd., Board Meeting, May 12, 2026. Agenda: To consider to transfer all of the Company’s equity interests in ROHM Electronics Dalian Co., Ltd. (“REDA”), a subsidiary in China engaged in the manufacturing of printheads and other products, to Dalian Sei-Etsu Precision Parts Industry Co., Ltd. (“Dalian Sei-Etsu”), a company of the Dalian Pengcheng Group.

ROHM Co., Ltd. has developed a wireless power supply IC chipset consisting of the receiver (ML7670) and transmitter (ML7671) compatible with Near Field Communication (NFC) technology for compact wearables such as smart rings and smart bands. The smart ring market has seen rapid growth in recent years. However, for extremely small ring-shaped devices worn on the finger, wired charging is impractical, while the conventional Qi wireless charging standard is difficult to implement due to constraints such as coil size. In response, NFC-based charging, which operates at the high-frequency 13.56MHz band that enables antenna miniaturization, is attracting increased attention, with adoption accelerating in next-generation wearables. This new chipset builds on the proven receiver (ML7660) and transmitter (ML7661). The maximum power transfer is specified at 250mW, while peripheral components such as the switching MOSFETs required to supply power to the charging IC are built in. The result is a solution optimized for both mounting area and power transfer efficiency in the power class demanded by compact wearable devices. The ML7670 power receiver IC achieves a maximum power transfer efficiency of 45% in the 250mW low output range -- all in an industry-leading form factor of just 2.28 x 2.56 x 0.48mm. What's more, all firmware required for wireless power delivery is embedded directly within the IC, eliminating the need for a host MCU. Compliance with NFC Forum (WLC 2.0) enables power transfer while maintaining compatibility with existing devices, positioning the chipset as a core element in the expanding NFC wireless power ecosystem. The new chipset is already in mass production. Furthermore, it has been adopted in SOXAI RING 2, the latest model launched on December 10, 2025, by SOXAI Inc., the Japanese developer and distributor of the original sleep-monitoring ring SOXAI RING. Application Examples - Smart rings - Smart bands - Smart pens - Wireless earphones - Other compact devices (i.e., wearables).

DENSO Corporation (TSE:6902) proposed to acquire remaining 95.2% stake in ROHM Co., Ltd. (TSE:6963) for an estimated $8.3 billion on March 6, 2026. Upon completion, DENSO Corporation will own 100% stake in ROHM Co., Ltd. DENSO Corporation (TSE:6902) cancelled the acquisition of remaining 95.2% stake in ROHM Co., Ltd. (TSE:6963) on April 28, 2026. DENSO Corporation has not obtained the support of ROHM’s Board of Directors and special committee with respect to the Proposal and has decided to withdraw the Proposal.

DENSO Corporation (TSE:6902) is considering withdrawing its acquisition proposal for major Japanese chipmaker ROHM Co., Ltd. (TSE:6963), informed sources have said. Denso, part of the Toyota Motor Corp. group, is finding it difficult to gain support from Rohm for the acquisition offer, the sources said. If the offer is withdrawn, industry consolidation in the Japanese power semiconductor industry is likely to proceed mainly through talks on business integration between Rohm, Toshiba Corp. and Mitsubishi Electric Corp. In early March, it came to light that Denso, which regards the chip business as a growth area amid expectations of long-term EV market growth, had offered to acquire Rohm. Rohm later set up a special committee to examine the proposal. Following Denso's acquisition proposal, Rohm announced on March 27 that it had reached a basic agreement to begin discussions on integrating its semiconductor business with Toshiba and Mitsubishi Electric. Rohm is also believed to be concerned about the possibility of being swallowed up by the Toyota group, industry sources said. As the business scale of each domestic power semiconductor maker is small, it is important for them to strengthen their international competitiveness at a time when Chinese and other manufacturers are increasing their presence. However, the form of the integration of the semiconductor operations by the three Japanese companies remains uncertain, including who will take the lead in realizing a three-way alliance.

ROHM Co., Ltd. has added the new CMOS Operational Amplifier (op amp) series "TLRx728" and "BD728x" to its lineup. These are suitable for a wide range of applications including automotive, industrial, and consumer systems. A broad lineup also makes product selection easier. In recent years, demand for high-accuracy op amps has been rapidly increasing as automotive and industrial systems become more sophisticated, demanding faster speed, better precision, and higher efficiency. In applications requiring amplification of sensor outputs, minimizing signal error and delay is essential. To meet these requirements, a well-balanced set of key characteristics is needed, including input offset voltage, noise, and slew rate. These new products are high-performance op amps that offer a low input offset voltage, low noise, and high slew rate. TLRx728 features an input offset voltage of 150 microvolts (typ.), while BD728x offers 1.6 millivolts (typ.). Both series have a noise voltage density of 12 nanovolts per square root hertz at 1kHz and a slew rate of 10 volts per microsecond. They are therefore suitable for a wide range of precision applications, including sensor signal processing, current detection circuits, motor driver control, and power supply monitoring systems. Both series are designed to balance versatility and high performance rather than being limited to specific applications. Rail-to-rail input/output capability allows maximum utilization of the power supply voltage range, ensuring a wide dynamic range. Furthermore, in addition to 1 channel, 2 channels, and 4 channels configurations, a diverse range of packages is available, enabling optimal product selection based on application and board size. The new products are being released simultaneously except for certain part numbers (Sample Price: 1-channel: $2.0, 2-channels: $2.8, 4-channels: $4.0 per unit, excluding tax). Application Examples Automotive equipment, industrial equipment, and consumer electronics. Example use case: Sensor signal processing, current detection circuits, motor driver control, and power supply monitoring systems.

Rohm Semiconductor announced it has released reference designs "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack" on Rohm’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with Rohm's SiC modules, these designs help reduce the person-hours required for device evaluation. In high power conversion circuits, while SiC power devices contribute to higher efficiency and reliability, they can increase the workload associated with peripheral circuit and thermal design. The reference designs released by Rohm support output power levels up to the 300kW class, facilitating the adoption of SiC modules across a wide range of automotive and industrial applications. Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell. These reference designs are intended for users to utilize the publicly released design data. If you would like to obtain a reference design board or evaluation kit, please contact a sales representative or visit the contact page on Rohm’s website. (Quantities are limited.) Details of SiC modules currently available through online distributors can be found below. Simulation support is also provided, including various support resources to facilitate quick evaluation and implementation of products. Rohm’s comprehensive solutions, including simulation and thermal design support, can provide valuable assistance in component selection. Various design data related to the evaluation boards can be downloaded from their respective reference design page, while the product information for SiC modules compatible with the reference designs can be accessed from each product page as well. Additionally, the Rohm Solution Simulator, a simulation tool enabling system-level verification from the component selection stage, is available on Rohm’s website. HSDIP20: Reference Design /Rohm Solution Simulator /LTspice Circuit Model. DOT-247: Reference Design /Rohm Solution Simulator /LTspice Circuit Model. TRCDRIVE pack: Reference Design. In addition to those introduced in this release, numerous reference designs that contribute to reduced design effort for users are offered. More details are available through the link below. EcoSiC is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). Rohm independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, an integrated production system throughout the manufacturing process has been established, solidifying the position as a leading SiC supplier. TRCDRIVE pack and EcoSiC are trademarks or registered trademarks of Rohm Co., Ltd. LTspice is a registered trade mark of Analog Devices Inc. When using third-party trademarks, please adhere to the usage guidelines specified by the rights holder. Three-Phase Inverter Circuits Featuring Rohm's EcoSiC.

ROHM Co., Ltd. (TSE:6963) and Toshiba Corporation will begin talks on the possible merger of their power semiconductor operations, it was learned on 12 March 2026. The move comes as automotive parts maker Denso Corp. is seeking to acquire Rohm, whose special committee is believed to be currently examining the acquisition offer. Rohm is expected to consider which offer would increase its corporate value more. Over power semiconductors, Rohm and Toshiba have already formed a production partnership, while Denso is collaborating with Fuji Electric Co. Mitsubishi Electric Corp. has also expressed interest in realigning the power semiconductor sector.

ROHM Co., Ltd. has begun online sales of new SiC molded modules: TRCDRIVE pack (TM), HSDIP20 and DOT-247. Amid growing concerns over tightening global power supply and need for energy conservation, these products promote the adoption of high-efficiency power conversion using SiC in a wider range of applications. These products are available from distributors such as DigiKey. The TRCDRIVE pack (TM) is a 2-in-1 SiC molded module compatible with traction inverters for xEV (electric vehicles) up to 300kW. ROHM's 4th Generation SiC MOSFETs with low ON resistance are built in -- resulting in power density 1.5 times higher than general SiC molded modules, while contributing to the miniaturization of inverters for xEVs. Furthermore, its unique terminal layout allows connection by pushing the gate driver board from the top, reducing installation time. The HSDIP20 is a SiC module in 4-in-1 and 6-in-1 configurations, ideal for xEV onboard chargers, EV charging stations, server power supplies and AC servos. The lineup includes six 750V and seven 1200V models. All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload and enabling circuit miniaturization. The DOT-247 is a 2-in-1 SiC module ideal for industrial applications such as PV inverters and UPS systems. The module retains the versatility of the widely adopted "TO-247" package while achieving high power density. It supports various circuit configurations through two topologies: half-bridge and common-source. By adopting it in power conversion circuits that incorporate multiple discrete components, it reduces the number of components and mounting area, supporting miniaturization and lower design effort.

ROHM Co., Ltd. announced that they will report fiscal year 2026 results at 3:30 PM, Tokyo Standard Time on May 12, 2026

ROHM Co., Ltd. announced that they will report Q1, 2027 results at 3:30 PM, Tokyo Standard Time on Aug 05, 2026

ROHM Co., Ltd., 2026 Earnings Call, May 13, 2026

DENSO Corporation (TSE:6902) proposed to acquire remaining 95.2% stake in ROHM Co., Ltd. (TSE:6963) for $8.3 billion on March 6, 2026. A cash consideration of $8.3 billion will be paid by DENSO Corporation. Upon completion, DENSO Corporation will own 100% stake in ROHM Co., Ltd.

ROHM Co., Ltd. announced it has decided to integrate its own development and manufacturing technologies for GaN power devices with the process technology of TSMC, with which ROHM has an ongoing partnership, to establish an end-to-end production system within the ROHM Group. By licensing TSMC GaN technology, ROHM will strengthen its supply capability to meet growing demand for GaN in applications such as AI servers and electric vehicles. GaN power devices offer excellent high-voltage and high-frequency performance, helping to improve efficiency and reduce size in a wide range of applications, and are already used in consumer products such as AC adapters. Adoption is also expanding in high-voltage applications such as power units for AI servers and on-board chargers for electric vehicles (EVs), and demand is expected to continue growing. ROHM began developing GaN power devices at an early stage and established a mass-production system for 150V GaN at ROHM Hamamatsu in March 2022. In the mid-power range, ROHM has built its supply structure while advancing external collaborations. One of the key partners in this effort has been TSMC: ROHM has adopted a 650V GaN process since 2023, and in December 2024, the two companies entered into a partnership related to automotive GaN, further deepening their collaboration. This latest integration represents an evolution of that partnership. Under a newly concluded license agreement, TSMC's process technology will be transferred to ROHM Hamamatsu. ROHM aims to establish the production system in 2027 to meet expanding demand in applications such as AI servers. Upon completion of the technology transfer, ROHM and TSMC will amicably conclude their automotive GaN partnership. At the same time, the two companies will continue to strengthen collaboration for higher efficiency and more compact power supply systems.

ROHM Co., Ltd. reported earnings results for the nine months ended December 31, 2025. For the nine months, the company reported sales was JPY 369,515 million compared to JPY 344,642 million a year ago. Net income was JPY 14,822 million compared to JPY 210 million a year ago. Basic earnings per share was JPY 38.4 compared to JPY 0.55 a year ago. Diluted earnings per share was JPY 32.75 compared to JPY 0.27 a year ago.

ROHM Co., Ltd. has developed the "BD9xxN5 Series" of LDO regulator ICs with 500mA output current, featuring its proprietary ultra-stable control technology "Nano Cap (TM"). This series is designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure. In recent years, electronic devices have demanded higher density in smaller form factors at the same time. To meet this demand and achieve space savings and design flexibility, power supply ICs must be capable of stable operation even with small-capacity capacitors. To address this challenge, ROHM developed the "BD9xx N1 Series" LDO regulator (150mA output current) in 2022, incorporating its proprietary ultra-stable control Technology, "Nano Cap (TM). The newly developed BD9xxN5 Series builds on the success of the BD9xxN1 Series by increasing the output current to 500mA -- more than three times higher than before -- significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250mV (with load current variation of 1mA to 500mA within 1 microsecond) is achieved with a small output capacitance of just 470nF (typical). This contributes to space saving as well as greater flexibility in component selection.

ROHM Co., Ltd. has developed the 100V power MOSFET--RS7P200BM--ach achieving safe operating area (SOA) performance in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for hot-swap circuits in AI servers employing 48V power supplies as well as for industrial equipment power supplies requiring battery protection. The rapid evolution and widespread adoption of AI technology have increased demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. In particular, hot-swap circuits require power MOSFETs with wide SOA tolerance to safely handle inrush current and overload conditions, ensuring stable operation. Furthermore, within data centers and AI servers, the transition toward 48V power supplies, which offer superior power conversion efficiency, is progressing against the backdrop of energy conservation. This necessitates the construction of high-voltage, high-efficiency power supply circuits capable of meeting these needs. Therefore, ROHM has strengthened its lineup of 100V power MOSFETs, ideal for hot-swap circuit in AI servers, to meet market needs. The new RS7P200BM adopts a compact DFN5060-8S (5060-size) package, enabling higher-density mounting compared to the RY7P250BM in a DFN8080-8S package, which ROHM released in May 2025. The new product achieves low on-resistance (RDS(on)) of 4.0milliohm (conditions: VGS=10V, ID=50A, Ta=25C) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs. ROHM will continue to strengthen its lineup of power devices for 48V power supply systems, contributing to reducing power loss and cooling loads in data centers, as well as enhancing the high reliability and energy efficiency of server systems.

ROHM Co., Ltd. has developed two new motor driver ICs for brushed DC motors, BD60210FV (20V, 2ch) and BD64950EFJ (40V, 1ch), which are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners. In recent years, the electrification of consumer and industrial equipment -- especially white goods -- has accelerated, increasing demand for energy-efficient brushed DC motors. At the same time, motor drivers are expected to support multiple applications and use cases while reducing external component count and size. To address these needs, these new products adopt highly versatile packages, making them ideal not only for new platform designs but also for redesigns and derivative products. Additionally, they achieve ultra-low standby current (Typ: 0.0 microampere, Max: 1.0 microampere), significantly contributing to power savings during standby operation. The BD60210FV can function as a dual H-bridge (2ch) motor driver with direct PWM control, capable of driving two DC brush motors, a bipolar stepper motor driver, or solenoid driver. Its H-bridge circuit configuration eliminates the need for a boost circuit, minimizing external components and contributing to space-saving and simplified design. The BD64950EFJ features a single H-bridge (1ch) that supports both direct PWM control and constant current PWM control. Its low on-resistance design reduces heat generation, enabling efficient motor drive. Both products are now in mass production. Online sales have also started, and they can be purchased from online distributors such as DigiKey, MOUSER and Farnell. Evaluation boards are also available to support application development and design. Application examples: Consumer equipment: Refrigerators (ice maker rotation, fan valve control), air conditioners (louver control), printers (carriage movement), robotic vacuum cleaners (brush rotation), water heaters and rice cookers (valve control), humidifiers (fan control) etc. Industrial equipment: Automatic doors and shutters (operation control), small conveyors (transport control), power tools (rotation control), other small motor control applications, etc.

ROHM Co., Ltd. expected to report Fiscal Year 2026 results on May 13, 2026. This event was calculated by S&P Global (Created on February 5, 2026).

ROHM Semiconductor announced they have developed two new motor driver ICs for brushed DC motors, BD60210FV (20V, 2ch) and BD64950EFJ (40V, 1ch). They are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners. In recent years, the electrification of consumer and industrial equipment - especially white goods - has accelerated, increasing the demand for energy-efficient brushed DC motors. At the same time, motor drivers are expected to support multiple applications and use cases while reducing external component count and size. To address these needs, these new products adopt highly versatile packages, making them ideal not only for new platform designs but also for redesigns and derivative products. Additionally, they achieve ultra-low standby current (Typ: 0.0mA, Max: 1.0mA), significantly contributing to power savings during standby operation. The BD60210FV can function as a dual H-bridge (2ch) motor driver with direct PWM control, capable of driving two DC brush motors, a bipolar stepper motor driver, or solenoid driver. Its H-bridge circuit configuration eliminates the need for a boost circuit, minimizing external components and contributing to space-saving and simplified design. It supports input voltage from 8V to 18V and 1A/phase continuous current and 4A/phase peak current. The BD64950EFJ features a single H-bridge (1ch) that supports both direct PWM control and constant current PWM control. Its low on-resistance design reduces heat generation, enabling efficient motor drive. With a 40V stand voltage and 3.5A continuous current (6A peak), it is suitable for high-powered, high-voltage (24V) DC brush motor applications. Both products are now in mass production. Online sales have also started, and they (BD60210FV, BD64950EFJ) can be purchased from online distributors such as DigiKey, MOUSER and Farnell. Evaluation boards (BD60210FV-EVK-001, BD64950EFJ-EVK-001) are also available to support application development and design. ROHM will continue to expand its motor drive solutions for consumer and industrial equipment, contributing to greater comfort and energy savings in society. Application Examples: Consumer Equipment: Refrigerators (ice maker rotation, fan valve control), Air conditioners (louver control), Pr printers (carriage movement), Robotic vacuum cleaners (brush rotation), Water heaters and rice cookers (valve control), Humidifiers (fan control) etc. Industrial Equipment: Automatic doors and shutters (operation control), Small conveyors (transport control), Power tools (rotation control), Other small motor control applications, etc.

ROHM Semiconductor announced they have begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design. In applications like AI servers and compact PV inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called "the pizza box type," stringent requirements demand thicknesses of 4mm or less for discrete semiconductors. ROHM's new product addresses these needs by reducing component footprint by approximately 26% and achieving a low profile of 2.3mm thickness - roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses. The lineup consists of six models with on-resistance ranging from 13mO to 65mO, with mass production started in September 2025. These products are available for online purchase from online distributors such as DigiKey, MOUSER and Farnell. Simulation models for all six new products are available on ROHM's official website, supporting rapid circuit design evaluation.

ROHM Semiconductor announced its development of the "RPR-0730", analog compact optical sensor, capable of high-precision detection of fast-moving objects. This sensor can be widely utilized in consumer and industrial equipment applications, including printers and conveyor systems. As industrial and office equipment becomes increasingly sophisticated and automated, there is a growing demand for improved sensing technology accuracy. In applications such as label printers, material or product transport systems, and copiers, the need for technology that can identify objects more accurately is essential. Moreover, increased speed driven by productivity improvements makes the introduction of high-speed, high-precision optical sensors crucial. The RPR-0730 is a compact reflective optical sensor (photo reflector). It employs an infrared VCSEL, which offers higher directionality than LEDs, enabling detection of finer objects. Furthermore, by using a phototransistor with analog output as the receiver, the sensor achieves a response time of 10us. This dual combination enables high-speed, accurate identification of fine lines as narrow as 0.1mm - previously difficult to detect with conventional LED light sources. As an addition to the existing digital output sensor "RPR-0720" series, RPR-0730 expands capability to applications requiring faster sensing, such as print detection incopiers, label printers, or rotational detection in motors and gears. The package is ultra-compact at 2.0mm x 1.0mm x 0.55mm and employs a visible light filtering resin to suppress interference from ambient light or sunlight. This enables stable detection even in environments with varying light conditions, such as factories or outdoors. The sensor can also be easily integrated into equipment requiring installation in small, confined spaces, like inside conveyors or precision instruments, making it suitable for a wider range of applications. Mass production of the new product commenced in October 2025. This product is available for online purchase from online distributors such as DigiKey and MOUSER. Going forward, ROHM will continue to leverage its development expertise in light-emitting and light-receiving elements to create sensing products that meet customer needs, contributing to the miniaturization and enhanced convenience of various devices.

ROHM Semiconductor announced it has developed the 100V power MOSFET - RS7P200BM - achieving SOA in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection. The rapid evolution and widespread adoption of AI technologies have increased the demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOA are essential to handle inrush current and overload conditions, ensuring stable operation. The transition towards 48V power supplies, which offer superior power conversion efficiency, is progressing against a backdrop of energy conservation within data centers and AI servers. This necessitates the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands. The new product achieves a low on-resistance (RDS(on)) of 4.0mO (conditions: VGS=10V, ID=50A, Ta=25degC) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs. Mass production of the new product began in September 2025. The product is also available for online purchase through online distributors such as DigiKey and Mouser.

ROHM Semiconductor announced the development of the BD67871MWV-Z, a three-phase brushless DC motor gate driver optimized for medium voltage systems (12 to 48V). Original TriC3™? gate drive technology makes it possible to significantly reduce FET switching loss while maintaining low EMI - overcoming a long-standing trade-off in motor driver IC design. With motors accounting for roughly 60% of global electricity consumption, control technologies that improve energy efficiency are becoming increasingly important. Traditional 12V to 48V motor drive systems typically use an MCU paired with three separate gate drivers. However, rising demand for higher efficiency and more precise control is accelerating the shift toward integrated solutions that combine an MCU with a three-phase motor driver. A major technical challenge in such systems has been balancing reduced power consumption with effective noise and EMI (electro-magnetic interference) suppression. The BD67871MWV- Z integrates ROHM's Active Gate Drive technology 'TriC3™?,' which continuously monitors voltage characteristics at the external power FETs and dynamically adjusts the gate drive current in real time. This greatly reduces FET switching losses (along with the associated heat generation/power consumption) while suppressing ringing to achieve low EMI. In real motor evaluations, TriC3TM reduced FET heat generation by approximately. 35% compared to ROHM's conventional constant-current drive solutions without sacrificing EMI performance. The new gate driver adopts the compact UQFN28 package and pin layout common to motor driver ICs used in medium-voltage industrial equipment, simplifying circuit redesign and development. ROHM also offers general-purpose motor drivers (BD67870MWV-Z, BD67872MWV-Z) in the same package and configuration that support constant-voltage drive. From standard types to advanced models featuring TriC3™?, ROHM provides a comprehensive lineup engineered to improve motor efficiency, enhance functionality, and reduce power consumption across a wide range of applications. Application Examples: Industrial Equipment: Electric drills/drivers and industrial fans; Consumer Appliances: Vacuum cleaners, air purifiers, air conditioners, ventilation fans and e-bikes (electric-assist bicycles). TriC3™? is a trademark or registered trademark of ROHM Co., Ltd. Mass production began in September 2025. The BD67871MW V-Z, along with an evaluation board (BD67871MWV-EVK-003), is now available for online purchase through distributors such as DigiKey and Mouser.

ROHM Co., Ltd. announced the dividend of JPY 25.00 per share for the second quarter of Year ending March 31, 2026, payable on December 5, 2025 against JPY 25.00 per share a year ago. Provided dividend guidance for the Year ending March 31, 2026. For the year, the company expects dividend of JPY 25.00 per share against JPY 25.00 per share a year ago.

ROHM Co., Ltd., ¥ 25.0, Cash Dividend, Mar-30-2026

ROHM Co., Ltd., Board Meeting, Nov 06, 2025. Agenda: To pay dividends of surplus (interim dividend) with a record date of September 30, 2025, in consideration of providing stable returns to shareholders; and to consider to calculate the forecast for the year-end dividend.

ROHM Co., Ltd. has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional VF/IR trade-off. This way, it delivers high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras. Modern ADAS cameras and similar systems require higher pixel counts to meet demand for greater precision. This has created a growing concern -- the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF. While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway. However, simultaneously achieving both low VF and low IR has been a longstanding technical challenge. The RBE01VYM6AFH represents a novel concept: leveraging the low-VF characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low IR that is typically difficult to realize with low VF designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering VF of less than 300mV (at IF=7.5mA even at Ta=40C), and IR of less than 20mA (at VR=3V even at Ta=125C). These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation. The diode is housed in a compact flat-lead SOD-323HE package (2.5 mm x 1.4 mm /0.098 inch x 0.055 inch) that offers both space efficiency and excellent mountability. The RBE01VyM6AFH is also AEC-Q101 qualified, ensuring suitability as a protection device for next-generation automotive electronics requiring high reliability and long-term stability. Application examples: Image sensor-equipped sets such as ADAS cameras, smart intercoms, security cameras, home IoT devices, etc. Online sales information: Sales launch: Now Sample price: $1.0/unit (excluding tax). Online distributors: DigiKey, Mouser, Farnell, etc.

ROHM Co., Ltd., Board Meeting, Oct 10, 2025. Agenda: To consider and undertake a reorganization of its Shiga Plant and four domestic manufacturing-related companies into two manufacturing companies, a wafer process manufacturing company and an assembly process manufacturing company, in order to improve the groups manufacturing capabilities and productivity.